| PART |
Description |
Maker |
| 2SK2394-7-TB-E 2SK2394-6-TB-E 2SK239412 |
N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications
|
Sanyo Semicon Device
|
| 2SK37107 2SK371 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK36907 2SK369 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK369-07 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications
|
SANYO
|
| 2SK20907 2SK209 |
Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK209 E001436 |
N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| 2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
| 2SK3320 2SK3320-GR 2SK3320Y |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| NJ132L |
Silicon Junction Field-Effect Transistor Low-Noise Amplifier
|
INTERFET[InterFET Corporation]
|
